Nature, Količina 427Sir Norman Lockyer Macmillan Journals Limited, 2004 |
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Zadetki 1–3 od 86
Stran 54
... interface . Whereas the SiO2 / Si interface relies on strong covalent bonds across the interface and a flexible bond network of the oxide , the interface described here is based on the chemical saturation of the silicon surface with an ...
... interface . Whereas the SiO2 / Si interface relies on strong covalent bonds across the interface and a flexible bond network of the oxide , the interface described here is based on the chemical saturation of the silicon surface with an ...
Stran 55
... interface lags behind the value reached in the growth chamber . The oxygen chemical poten- tial needs to be sufficiently low to avoid formation of an interfacial SiO2 layer but high enough to avoid a large oxygen vacancy concentration ...
... interface lags behind the value reached in the growth chamber . The oxygen chemical poten- tial needs to be sufficiently low to avoid formation of an interfacial SiO2 layer but high enough to avoid a large oxygen vacancy concentration ...
Stran 428
... interface . The interface is modelled by a Ni ( 111 ) surface with a graphene overlayer . Using the local density approximation ( LDA ) for exchange and correlation , the adhesion energy of the graphene overlayer is calculated to be ...
... interface . The interface is modelled by a Ni ( 111 ) surface with a graphene overlayer . Using the local density approximation ( LDA ) for exchange and correlation , the adhesion energy of the graphene overlayer is calculated to be ...
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